Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET)

ABSTRACT

In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.

FIELD OF THE INVENTION

The present invention relates generally to silicon-on-insulator (SOI)technology, and more specifically to measuring the floating body voltageof a body-contacted SOImetal-oxide-semiconductor-field-effect-transistor (MOSFET) device, sothat this measurement can be used as a reasonable estimate of thefloating body voltage of a floating body SOI MOSFET of the same devicedimensions.

BACKGROUND

SOI integrated circuits technology offer several advantages over bulkdevices in terms of speed, isolation, density, yield and performance inthe sub-micron arena. Despite these advantages, the use of SOIintegrated circuits has its challenges. For example, consider a floatingbody of an SOI MOSFET (e.g., a field-effect-transistor (FET)) that hasno contact to the body node because it resides on an insulatedsubstrate. Because it is not contacted, it is difficult to ascertain thevoltage at the floating body. Without having accurate voltagemeasurements of the floating body, it becomes difficult for a deviceengineer to model the behavior of a particular SOI MOSFET device. Forexample, gate voltage and drain voltage of a SOI MOSFET device arereadily ascertainable, however, because a measurement for the floatingbody voltage is difficult to accurately ascertain, a device engineercannot model the drain current which is a function of the gate voltage,drain voltage and floating body voltage. In order to overcome thischallenge, body-contacted SOI MOSFET devices have been used to obtain ameasure of floating body voltage. However, obtaining an accurate measureof the floating body voltage of a body-contacted SOI MOSFET device is achallenge for device engineers. In particular, when a floating body nodeis coupled to a voltmeter to obtain a measure of the floating bodyvoltage, there will be a low flowing current that loads the node, whichcauses the floating body voltage to change. Therefore, any measurementof the floating body voltage at the node will be erroneous due to thecurrent loading caused by the voltmeter.

SUMMARY

In one embodiment, a structure is disclosed. In this embodiment, thestructure comprises a first body-contacted silicon-on-insulator (SOI)metal-oxide-semiconductor-field-effect-transistor (MOSFET) device havinga drain region, a source region, a body region separating the drainregion from the source region, and a gate disposed above the bodyregion. A sensing circuit, coupled to the first body-contacted SOIMOSFET device, has an input and an output. The body region of the firstbody-contacted SOI MOSFET device is coupled to the input of the sensingcircuit to form a floating body node. A voltage measure of the floatingbody node is obtained at the output of the sensing circuit.

In a second embodiment, a structure is disclosed that comprises aninput, an output, a power supply port and a ground port. The structurefurther comprises a firstmetal-oxide-semiconductor-field-effect-transistor (MOSFET) device havinga drain region, a source region, a body region separating the drainregion from the source region, and a gate disposed above the bodyregion. The gate of the first MOSFET device is coupled to the input. Thedrain of the first MOSFET device is coupled to the power supply port.The body region of the first MOSFET device is coupled to the sourceregion of the first MOSFET device. The source of the first MOSFET deviceis coupled to the output. The structure further comprises a secondmetal-oxide-semiconductor-field-effect-transistor (MOSFET) device havinga drain region, a source region, a body region separating the drainregion from the source region, and a gate disposed above the bodyregion. The drain region of the second MOSFET device is coupled to thesource region of the first MOSFET device. The gate of the second MOSFETdevice is coupled to the drain region of the second MOSFET device. Thebody region of the second MOSFET device is coupled to the source regionof the second MOSFET device. The source region of the second MOSFETdevice is coupled to the ground port.

In a third embodiment, a method is disclosed. In this embodiment, themethod comprises: providing a first body-contacted silicon-on-insulator(SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) devicehaving a drain region, a source region, a body region separating thedrain region from the source region, and a gate disposed above the bodyregion, the first body-contacted SOI MOSFET device coupled to a sensingcircuit having an input and an output, wherein the body region of thefirst body-contacted SOI MOSFET device is coupled to the input of thesensing circuit to form a floating body node having a voltage Vbody;measuring the voltage at the output of the sensing circuit, the voltageat the output of the sensing circuit represented as Vout; anddetermining the voltage of the floating body node Vbody from the voltagemeasurement at the output of the sensing circuit Vout, whereinVbody=2*Vout.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of a silicon-on-insulator (SOI)metal-oxide-semiconductor-field-effect-transistor (MOSFET);

FIG. 2 shows a circuit diagram of a body-contacted SOI MOSFET structure;

FIG. 3 shows a circuit diagram of the body-contacted SOI MOSFETstructure depicted in FIG. 2 coupled to a voltmeter to obtain ameasurement of the floating body voltage;

FIG. 4 shows a circuit diagram of a structure according to an embodimentof the present invention;

FIG. 5 shows a circuit diagram of the structure depicted in FIG. 4coupled to a voltmeter to obtain a direct measurement of the floatingbody voltage according to an embodiment of the present invention; and

FIG. 6 shows simulation results of the floating body voltage measured inthe circuits depicted in FIGS. 3 and 5.

DETAILED DESCRIPTION

Embodiments of the present invention are directed to a structure andmethod which enable a device engineer to directly and accurately measurethe floating body voltage of a body-contacted silicon-on-insulator (SOI)metal-oxide-semiconductor-field-effect-transistor (MOSFET). In thevarious embodiments of the present invention, the body region of abody-contacted SOI MOSFET, such as an SOI field-effect-transistor (FET),is connected to a gate of another MOSFET that is part of a sensingcircuit device. Connecting the body region of the body-contacted SOIMOSFET to the input of a sensing circuit provides a voltage at theoutput of the sensing circuit which can be measured with a voltmeter.Because the relationship between the input and output voltages areknown, the floating body voltage can be calculated from the measuredoutput voltage. In the various embodiments of the present invention, thebody-contacted SOI MOSFET is not subject to the current loading of thevoltmeter, because the sensing circuit isolates the floating body fromthe voltmeter. Therefore, the indirect measurement of the floating bodyvoltage provided by the various embodiments of the present invention isaccurate and not limited by any current loading.

Technical effects provided by the various embodiments of the presentinvention are applicable to modeling of integrated circuit devices andto design of integrated circuit devices. For example, in the modeling ofintegrated circuit devices that utilize SOI MOSFETs, it is desirable todescribe the device behavior of these types of MOSFETS. In particular,device engineers typically would like to know the voltage of a floatingbody because this value along with gate voltage and drain voltage areused to ascertain drain current. Since the various embodiments of thepresent invention provide an accurate way of directly obtaining thefloating body voltage, device engineers can use this value along withother easily measurable parameters (e.g., gate voltage, drain voltage,etc.) to model or predict the drain currents of integrated circuitdevice designs over a full operating range. Note that it is helpful tohave an accurate measure of the floating body voltage because as itmoves up and down, the threshold voltage of a device will change, and asa result, the value of the drain current changes. With regard to thedevice design perspective, a device engineer of an SOI MOSFET devicewould typically like to know what the floating body voltage will beunder different gate and drain conditions. This information is helpfulbecause a device engineer of an SOI MOSFET wants to ensure that thefloating body voltage of a particular device does not go beyond desiredranges.

FIG. 1 shows a cross-sectional view of a structure 100. In thisembodiment, structure 100 is a floating body SOI MOSFET device 105. Inone embodiment, floating body SOI MOSFET device 105 is a FET. Floatingbody SOI MOSFET device 105 includes a semiconductor layer 110 formedover a buried dielectric layer 115, which is formed on a substrate 120.As shown in FIG. 1, semiconductor layer 110 comprises a drain region125, a source region 130, a body region (i.e., the channel) 135separating the drain region from the source region, and a gate 140disposed above the drain region, source region and body region. In oneembodiment, gate 140 is situated over a gate oxide layer 145. Structure100 is a floating body SOI MOSFET device 105 because a body node 150 ofbody region 135 has no contact. Contact of body node 150 can be madethrough special layers (not shown) in order to control its voltage. As aresult, SOI MOSFET device 105 is referred to as a body-contacted SOIMOSFET.

In one embodiment, semiconductor layer 110 can comprise silicon and gateoxide layer 145 can comprise silicon oxide or a metal oxide. In oneembodiment, drain region 125 and source region 130 can be heavily dopedwith a suitable N-type dopant or a P-type dopant. Buried dielectriclayer 115 can be any suitable insulating material, such as, for example,oxide; while substrate 120 can comprise silicon. Floating body SOIMOSFET device 105 may correspond to a floating body N-type FET (NFET) ora P-type FET (PFET).

FIG. 2 shows a circuit diagram of a body-contacted SOI MOSFET structure200. As shown in FIG. 2, body-contacted SOI MOSFET structure 200comprises a SOI MOSFET T1 having a drain region d1, a source region s1,a body region b1 separating drain region d1 from source region s1, and agate g1 disposed above drain region d1, source region s1 and body regionb1. Gate g1 and drain d1 are each coupled to a positive terminal of apower supply VDC via a power supply port. The negative terminal of powersupply VDC is connected to ground GND. As shown in FIG. 2, body regionb1 of SOI MOSFET T1 has a Node A that is not contacted. Hence, bodyregion b1 is considered to be floating.

As mentioned above, it is desirable for device engineers to be able toascertain what the floating body voltage of a body-contacted SOI MOSFETis in order to describe device behavior during modeling of a device. Inaddition, it is also desirable to know what the floating body voltagewill be under different gate and drain conditions while designing an SOIMOSFET. In one embodiment, the floating body voltage can be attempted tobe measured in FIG. 2 via Node A. FIG. 3 shows a circuit diagram of thebody-contacted SOI MOSFET T1 200 depicted in FIG. 2 coupled to avoltmeter 310 to obtain a measurement of the floating body voltage atNode B, which is representative of Node A in this figure. Because bodyNode B is coupled directly to voltmeter 310, it gets loaded as voltmeterdraws some current from the node. This causes the floating body voltageof Node B to change because the draining out of current, and thus thefloating body voltage of Node B as measured by voltmeter 310 will beerroneous. Therefore, a device engineer cannot accurately measure thefloating body voltage of Node B by coupling voltmeter 310 to the node.

FIG. 4 shows a circuit diagram of a structure 405 that facilitatesdirect and accurate measurement of a body-contacted SOI MOSFET structureaccording to an embodiment of the present invention. As shown in FIG. 4,structure 405 includes a body-contacted SOI MOSFET device T1 having adrain region d1, a source region s1, a body region b1 separating drainregion d1 from source region s1, and a gate g1 disposed above drainregion d1, source region s1 and body region b1. Source region s1, drainregion d1, and gate g1 are configured to allow for an externally appliedvoltage VDC. In particular, gate g1 and drain d1 are each coupled to apositive terminal of a power supply VDC via a power supply port. Thenegative terminal of the power supply VDC is connected to ground GND.

Structure 405 further comprises a sensing circuit 410 that facilitatesmeasuring the floating body voltage of Node C. As shown in FIG. 4,sensing circuit 410 comprises a body-contacted SOI MOSFET device T2,coupled to a body-contacted SOI MOSFET device T3. Body-contacted SOIMOSFET device T2 and body-contacted SOI MOSFET device T3 each has adrain region (d2 and d3), a source region (s2 and s3), a body region (b2and b3) separating the drain region from the source region. In addition,SOI MOSFET device T2 and SOI MOSFET device T3 each has a gate (g2 andg3) disposed above their respective drain regions, source regions andbody regions. In more particular detail, as shown in FIG. 4, gate g2 ofSOI MOSFET device T2 is coupled to body region b1 of SOI MOSFET deviceT1. In one embodiment, drain region d2 of SOI MOSFET device T2 iscoupled to a terminal of a positive power supply VDC via a power supplyport and the source region s3 of SOI MOSFET device T3 is connected to anegative power supply VDC via a power supply port. In anotherembodiment, drain region d2 of SOI MOSFET device T2 is coupled to aterminal of a positive power supply VDC via a power supply port and thesource region s3 of SOI MOSFET device T3 is connected to ground GND viaa power supply port. Body region b2 of SOI MOSFET device T2 is coupledto source region s2 of SOI MOSFET device T2. Source region s2 of SOIMOSFET device T2 is coupled to drain region d3 of SOI MOSFET device T3.Gate g3 of SOI MOSFET device T3 is coupled to the drain region d3 of SOIMOSFET device T3. Body region b3 of SOI FET device T3 is coupled tosource region s3 of SOI MOSFET device T3.

In one embodiment, SOI MOSFET device T2 and SOI MOSFET device T3 haveidentical geometries (i.e., identical gate lengths, gate widths and gatestacks). In another embodiment, SOI MOSFET device T2 and SOI MOSFETdevice T3 have identical doping concentrations. In another embodiment,SOI MOSFET device T2 and SOI MOSFET device T3 each has a gate inputleakage of less than about 1 pico amp (pA). Having a gate input leakageof less than about 1 pA is desirable because, otherwise, it will loadbody region b1 of SOI MOSFET device T1, as it will draw current from it.In another embodiment, SOI MOSFET device T2 and SOI MOSFET device T3each has a threshold voltage of less than about 100 milli volts (mV).Having a threshold voltage of less than about 100 mV is desirablebecause it facilitates accurate measurement of the node voltage of bodyregion b1 of SOI MOSFET device T1. In particular, to obtain an accuratemeasurement of the node voltage of body region b1 of SOI MOSFET deviceT1 through sensing circuit 410, both SOI MOSFET devices T2 and T3 shouldbe in saturation. Having a threshold voltage of less than about 100 mVwill ensure this for most of the voltage measurement.

FIG. 5 shows a circuit diagram of floating body test structure 405depicted in FIG. 4 coupled to a voltmeter 505 to obtain a directmeasurement of the floating body voltage of Node C according to anembodiment of the present invention. With the coupling of voltmeter 505to floating body test structure 405, an input 510 and an output 515 isformed in sensing circuit 410. In one embodiment, input 510 has a highimpedance and output 515 has a low impedance. In the configuration shownin FIG. 5, body region b1 of SOI MOSFET device T1 is coupled to input510, which is coupled to gate g2 of SOI MOSFET device T2. Coupling bodyregion b1 of SOI MOSFET device T1 to gate g2 of SOI MOSFET device T2 atinput 510 forms a floating body node which is shown in FIGS. 4 and 5 asNode C. A voltage measure of Node C is directly obtained at output 515at Node D.

As shown in FIG. 5, source region s2 of SOI MOSFET FET device T2, andgate g3 and drain region d3 of SOI MOSFET device T3 form output 515 ofsensing circuit 410. Source region s2 of SOI MOSFET device T2 is coupledto voltmeter 505 along Node D. Voltmeter 505 is configured to obtain thevoltage measure of Node D, which as shown below can be used to quicklyand accurately ascertain the floating body voltage of Node C withoutperformance of any complex calculations. Because body region b1 of SOIMOSFET device T1 is coupled to input 510 via gate g2 of SOI MOSFETdevice T2, voltmeter 505 can be coupled to s2 of SOI MOSFET device T2 toobtain a direct voltage measurement of Node D without loading lowflowing current in SOI MOSFET device T1. Since a voltage measurement ofNode D can be used to ascertain a voltage measurement for Node C,embodiments of the present invention are able to obtain an accuratemeasurement of the floating body voltage of a body-contacted SOI MOSFETdevice T1. As a result, the voltage measurement of the floating bodynode for SOI MOSFET device T1 provided by voltmeter 505 can be used asan estimate of floating body voltage for other body-contacted SOI MOSFETdevices having geometries similar to body-contacted SOI MOSFET deviceT1.

The following equations describe the relationship between the voltagesfor Node C and Node D:V(Node C)−V(Node D)=V(Node D),wherein  (1)V(Node C) is the voltage of Node C and V(Node D) is the voltage of NodeD. Equation 1 holds as both SOI MOSFET devices T2 and T3 are insaturation and the same drain current flows through them. From equation1 it follows that:V(Node C)=2*V(Node D)  (2)Therefore, in general terms, using the various embodiments of thepresent invention, a floating body node having a voltage Vbody can beobtained by measuring the voltage Vout at the output of the sensingcircuit 410, and then using the following equation to determine thevoltage of the floating body node Vbody:Vbody=2*Vout  (3)Equations 1 and 2 are verified by simulation results shown in FIG. 6.

FIG. 6 shows simulation results 600 of the floating body voltagemeasured in the circuits depicted in FIGS. 3 and 5 with simulated valuesfor the circuit components. In addition, FIG. 6 shows how a voltagemeasurement of Node D can be used to ascertain the floating body voltageof Node C for the circuits depicted in FIGS. 4-5. In FIG. 6, the topsimulation result 605 represents the measured voltages at Nodes C and A(floating body nodes) from FIGS. 2 and 4-5 as the gate voltage of theSOI MOSFET device T1 is varied. Simulation result 605 shows that voltagemeasurements of Nodes C and A are substantially the same. Middlesimulation result 610 represents the voltage of Node C minus the voltageof Node D and the voltage of Node D from FIGS. 4-5 as the gate currentsof the SOI MOSFET device T1 are varied. Essentially, Nodes C and D arethe nodes that are indicative of the floating body node voltage.Simulation result 610 shows that the results for the voltage of Node Cminus the voltage of Node D and the voltage of Node D are essentiallythe same. Because the voltages for Node C and Node A are substantially,the same, one can use a simple algebraic formulation (equation 1) toascertain from simulation result 610 that Node C is equal to 2*Node D(equation 2). Because Node C is equal to 2*Node D, then if the voltageis known for Node D, it can be used to ascertain the voltage for Node C.As shown herein, various embodiments of the present invention can obtaindirect and accurate measurements of the voltage at Node D. As a result,a voltage measurement for Node D can be used to obtain the floating bodyvoltage of Node C because the voltage for Node C is equal to 2*thevoltage of Node D. Bottom simulation result 615 shows the voltagemeasurement of Node B from FIG. 3. As shown in simulation result 615,adding a voltmeter 310 (FIG. 3) to the SOI FET T1 becomes loaded withcurrent, and thus is not able to provide an accurate measurement of thefloating body voltage of Node B. In particular, the results of thevoltage measurements of Node B are substantially different from thevoltage measurements of Nodes C and A as shown in simulation result 605.It is apparent from the simulation results 600 of FIG. 6 that thefloating body test structure provided by the various embodiments of thepresent invention is able to provide an accurate measurement of thefloating body node voltage that is not affected by current loading by avoltmeter, and that does not require complex calculations.

In another embodiment of the present invention, the circuit in FIG. 5can be modified by connecting source region s3 of SOI MOSFET device T3to a power supply. By applying a negative voltage at this node, SOI FETdevice T2 and SOI FET device T3 can be kept in saturation for anaccurate measurement of Node C for very small voltages on Node C. Inthis embodiment the equation for the voltage at Node C is:V(Node C)=2*V(Node D)−V(S3),wherein  (4)V(S3) is the voltage of source region S3 of SOI FET device T3.

While the disclosure has been particularly shown and described inconjunction with a preferred embodiment thereof, it will be appreciatedthat variations and modifications will occur to those skilled in theart. Therefore, it is to be understood that the appended claims areintended to cover all such modifications and changes as fall within thetrue spirit of the invention.

What is claimed is:
 1. A structure, comprising: a first body-contactedsilicon-on-insulator (SOI)metal-oxide-semiconductor-field-effect-transistor (MOSFET) device havinga drain region, a source region, a body region separating the drainregion from the source region, and a gate disposed above the bodyregion; and a sensing circuit, coupled to the first body-contacted SOIMOSFET device, having an input and an output, the input of the sensingcircuit having a high impedance and the output of the sensing circuithaving a low impedance, wherein the body region of the firstbody-contacted SOI MOSFET device is coupled to the input of the sensingcircuit to form a floating body node, wherein a voltage measure of thefloating body node is obtained at the output of the sensing circuit. 2.The structure according to claim 1, wherein the voltage measure of thefloating body node obtained at the output of the sensing circuitprovides an estimate of floating body voltage for other body-contactedSOI MOSFET devices having geometries similar to the first body-contactedSOI MOSFET device.
 3. The structure according to claim 1, furthercomprising a voltmeter configured to be coupled to the output of thesensing circuit to obtain the voltage measure of the floating body node.4. The structure according to claim 1, wherein the sensing circuitcomprises a second body-contacted SOI MOSFET device coupled to a thirdbody-contacted SOI MOSFET device, wherein the second body-contacted SOIMOSFET device and the third body-contacted SOI MOSFET device each has adrain region, a source region, a body region separating the drain regionfrom the source region, and a gate disposed above the body region, andwherein the source region of the second SOI MOSFET and the gate and thedrain region of the third body-contacted SOI MOSFET device are connectedtogether to form the output of the sensing circuit, and wherein the gateof the second body-contacted SOI MOSFET device forms the input of thesensing circuit.
 5. The structure according to claim 4, wherein thedrain region of the second body-contacted SOI MOSFET device is connectedto a positive power supply and the source region of the thirdbody-contacted SOI MOSFET device is connected to a negative powersupply.
 6. The structure of claim 4, wherein the drain region of thesecond body-contacted SOI MOSFET device is connected to a positive powersupply and the source region of the third body-contacted SOI MOSFETdevice is connected to ground.
 7. The structure of claim 4, wherein theinput of the sensing circuit has a high impedance and the output of thesensing circuit has a low impedance.
 8. A structure, comprising: aninput; an output; a power supply port; a ground port; a firstmetal-oxide-semiconductor-field-effect-transistor (MOSFET) device havinga drain region, a source region, a body region separating the drainregion from the source region, and a gate disposed above the bodyregion, wherein the gate of the first MOSFET device is coupled to theinput, the drain region of the first MOSFET device is coupled to thepower supply port, the body region of the first MOSFET device is coupledto the source region of the first MOSFET device, the source region ofthe first MOSFET device is coupled to the output; and a secondmetal-oxide-semiconductor-field-effect-transistor (MOSFET) device havinga drain region, a source region, a body region separating the drainregion from the source region, and a gate disposed above the bodyregion, wherein the drain region of the second MOSFET device is coupledto the source region of the first MOSFET device, the gate of the secondMOSFET device is coupled to the drain region of the second MOSFETdevice, the body region of the second MOSFET device is coupled to thesource region of the second MOSFET device, the source region of thesecond MOSFET device is coupled to the ground port.
 9. The structureaccording to claim 8, wherein the first MOSFET device and the secondMOSFET device have identical geometries.
 10. The structure according toclaim 8, wherein the first MOSFET device and the second MOSFET devicehave identical doping concentrations.
 11. The structure according toclaim 8, wherein the first MOSFET device and the second MOSFET deviceeach has a gate input leakage of less than about 1 pico amp (pA). 12.The structure according to claim 8, wherein the first MOSFET device andthe second MOSFET device each has a threshold voltage of less than about100 milli volts (mV).
 13. The structure according to claim 8, furthercomprising a third MOSFET device having a drain region, a source region,a body region separating the drain region from the source region, and agate disposed above the body region, wherein the gate, source region anddrain region of the third MOSFET device are configured to allow for anexternally applied voltage, and wherein the body region of the thirdMOSFET device is coupled to the input that is coupled to the gate of thefirst MOSFET device.